Ion Beam Shaping System

Ion Beam Shaping System

Leuven Instruments muaj 8-nti (IBS-8) thiab 12-nti (IBS-12) IBS systems, ob qho tib si raws li lub cev sputtering: zoo ions los ntawm ion qhov chaw yog ceev, nruab nrab, thiab bombarded tus qauv nto rau cov qauv.
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Hauj lwm lawm

Cov khoom muag

Leuven Instruments muaj 8-nti (IBS-8) thiab 12-nti (IBS-12) IBS systems, ob qho tib si raws li lub cev sputtering: zoo ions los ntawm ion qhov chaw yog ceev, nruab nrab, thiab bombarded tus qauv nto rau cov qauv.

01/

Common Design:Plasma tiam yog sib cais los ntawm thaj chaw wafer kom tsis txhob muaj kev cuam tshuam los ntawm cov khoom tsis yog -volatile byproducts; ob leeg txhawb ib leeg/cluster chamber configurations.

02/

Qhov txawv:Lub 12-inch system yog tsim rau 12-inch wafer pawg ntau lawm nrog ib qhov loj-inch ion qhov chaw; 8-nti system yog sib xws nrog 8/6/4-inch wafers, zoo tagnrho rau nruab nrab-me me nplai ntau lawm thiab R & D.

 

Qhov zoo

Common Advantages

1. Cov khoom siv dav dav: Cov txheej txheem hlau, alloys, oxides, semiconductors, insulators, thiab lwm yam.
2.Slexible tswj: ywj siab hloov ntawm ion beam zog / ceev; -90℃rau +80℃theem qaij rau tilted qauv/sidewall tu; rotatable theem rau uniformity.

Differentiated Advantages

1.12 nti (IBS-12):<1% etch uniformity (1σ), suitable for high-precision 12-inch advanced processes (e.g., emerging memory).
2.8 nti (IBS-8):<3%/2% uniformity (standard/large ion source); compact size, cost-effective, fit for mature nodes and R&D.

 

Qhov zoo

Ultra{0}}siab uniformity & precision

Nws qhov loj -inch ion qhov chaw hits<1% etching uniformity (1σ)-super consistent. You can tweak ion beam settings independently, dialing in parameters just right to cut down material damage.

Broad cov ntaub ntawv compatibility

Tsis muaj tshuaj hangs -ups zoo li RIE- tuav txhua yam khoom tawm muaj, los ntawm Ta thiab MTJ txheej mus rau insulators. Zoo meej rau cov khoom siv dag zog hauv cov khoom siv siab heev.

Hloov tau yooj yim

Lub wafer theem qaij los ntawm -90℃rau +80 degree, zoo rau cov qauv slanted. Ntxiv nyob rau hauv on-axis kev sib hloov mus rau boost symmetry, thiab nws yuav haum rau txhua hom kev xav tau qauv.

Kev ntseeg siab ntau lawm

Nws tau npaj rau qhov rau hauv 12-inch fabs, ua haujlwm nrog txhua hom kev hloov pauv hloov pauv. Lub cev sputtering txhais tau tias tsis muaj tshuaj lom neeg seem - txiav kev tu ncua thiab ua kom cov haujlwm ruaj khov mus ntev.

 

Daim ntawv thov

 

Cov ntawv thov siv
Semiconductor qauv (logic / nco cov cuab yeej); fabrication ntawm slanted / blazed gratings; tshaj tawm -etch sidewall tu.


Daim ntawv thov sib txawv
1.12-nti: Cov txheej txheem tseem ceeb rau 12-nti lub cim xeeb tshwm sim (xws li, MRAM MTJ), kev koom ua ke nrog LMEC-300™ rau kev tsim khoom loj.
2.8-nti: 8-inch mature nodes (piv txwv li, 0.11μm poly rooj vag etching); MEMS/optoelectronic R&D.

 

Tsis muaj

 

Qeb

8-nti IBS System

12-nti IBS System

Qauv

Lorem A Series

Pangea A Series

Wafer Compatibility

8-nti (thawj); 6-nti / 4-nti (yeem, ntawm cov electrodes tau tshaj)

12-nti (tsuas yog)

Uniformity (1σ)

<3% (standard ion source); <2% (optional large-diameter ion source)

<1% (large-diameter ion source as standard)

Ion Beam Tswj

Kev ywj pheej hloov ntawm ion beam zog thiab flux

Kev ywj pheej hloov ntawm ion beam zog thiab flux

Theem Tilt Range

-90℃rau +80℃(pab kom tilted ion beam tshwm sim)

-90℃rau +80℃(pab kom tilted ion beam tshwm sim)

Theem Function

Rotatable thaum lub sijhawm txheej txheem (txhim kho cov txheej txheem axisymmetry)

Rotatable thaum lub sijhawm txheej txheem (txhim kho cov txheej txheem axisymmetry)

Chamber Configuration

Tib -chamber lossis pawg teeb tsa (yeem)

Integratable rau hauv ntau pawg kab ke (sib haum nrog loj -scale ntau lawm kab)

Khoom Compatibility

Hlau, alloys, oxides, compounds, semiconductors, insulators, thiab lwm yam khoom siv

Hlau, alloys, oxides, compounds, semiconductors, insulators, thiab lwm yam khoom siv

Core Application Scenarios

8-inch mature process nodes (Ntau dua lossis sib npaug ntawm 0.11μm), poly rooj vag etching, STI auxiliary processing, R&D (MEMS/optoelectronics)

12- nti cov txheej txheem siab heev, lub cim xeeb tshwm sim (MRAM MTJ, PCRAM theem-hloov txheej) ntau lawm

 

FAQ

 

Q: Yuav ua li cas xaiv ntawm 8-nti thiab 12-nti IBS systems?

A: Xaiv raws li wafer loj thiab ntau lawm nplai. Xaiv 12-inch rau 12-nti wafer pawg ntau lawm nrog siab precision; 8-nti yog qhov zoo tagnrho rau 8/6/4-nti wafers, me-nruab nrab ntau lawm lossis R & D.

Q: Cov tshuab puas tuaj yeem ua cov khoom tsis yog -semiconductor?

A: Yog. Ob leeg txhawb nqa yuav luag txhua yam khoom siv, suav nrog hlau, oxides, insulators, thiab cov khoom sib xyaw, dhau ntawm cov khoom siv semiconductor.

Q: Puas yog 8-nti system tuaj yeem hloov kho kom zoo dua qub wafers?

A: Tsis yog 8-nti system yog tsim los rau 8-nti thiab me wafers; 12-nti wafers xav tau lub siab rau Pangea A Series.

Q: Dab tsi ua kom cov txheej txheem ruaj khov ntawm ob lub tshuab?

A: Cov qauv sib cais ntawm cov ntshav ntau lawm thiab thaj chaw wafer zam kev cuam tshuam los ntawm cov khoom, ntxiv rau cov theem rotatable thiab tus qauv- cov khoom ua raws li kev ruaj ntseg.

 

Cim npe nrov: Tuam Tshoj ion beam shaping system manufacturers, lwm tus neeg

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